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The index of refraction of Si varies between 5 and 7 in the spectral range from 300-400 nm and drops to less than 3.5 above 1000 nm. This causes the power reflectivity at a 45° incidence angle to vary from ∼50% in the near UV to ∼30% in the near IR. Thus, using the light reflected from the silicon wafer increases the ratio of UV to IR, allowing a relatively high etch rate while minimizing possible heating effects.
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85037520813
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Due to the geometry of the GaN/sapphire samples, attempts at determining the roughness by atomic force microscopy were unsuccessful.
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