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Volumn 77, Issue 26, 2000, Pages 4253-4255

Optically pumped InGaN/GaN lasers with wet-etched facets

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0011959568     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1333689     Document Type: Article
Times cited : (10)

References (20)
  • 14
    • 85037505474 scopus 로고    scopus 로고
    • note
    • The index of refraction of Si varies between 5 and 7 in the spectral range from 300-400 nm and drops to less than 3.5 above 1000 nm. This causes the power reflectivity at a 45° incidence angle to vary from ∼50% in the near UV to ∼30% in the near IR. Thus, using the light reflected from the silicon wafer increases the ratio of UV to IR, allowing a relatively high etch rate while minimizing possible heating effects.
  • 15
    • 85037520813 scopus 로고    scopus 로고
    • note
    • Due to the geometry of the GaN/sapphire samples, attempts at determining the roughness by atomic force microscopy were unsuccessful.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.