Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 A, 2001, Pages

  Lee, Jae Seung ^a,b   Kim, Jong Wook ^b   Jung, Doo Chan ^b,c   Kim, Chang Seok ^d   Lee, Won Sang ^b   Lee, Jae Hak ^b   Shin, Jin Ho ^b   Shin, Moo Whan ^c   Oh, Jae Eung ^d   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b LG Electronics Inc   (South Korea)

^c Myong Ji University   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

Al0.2Ga0.8N GaN; Gate recess etching; Heterojunction field effect transistor; Photoresist etching mask; Wet recess etching

Indexed keywords

ELECTROCHEMISTRY; ELECTRON CYCLOTRON RESONANCE; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PHOTOELECTRICITY; PHOTORESISTS; REACTIVE ION ETCHING; TRANSCONDUCTANCE;

AUMINUM GALLIUM NITRIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; PHOTOELETROCHEMICAL GATE RECESS ETCHING; PHOTORESIST ETCHING MASK; WET RECESS ETCHING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035271324     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l198     Document Type: Letter

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