Microstructure and photoluminescence of electrochemically etched porous SiC

Thin Solid Films

Volumn 297, Issue 1-2, 1997, Pages 224-228

  Jessensky, O ^a   Muller F ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Scanning electron microscopy; Silicon carbide; Time dependent photoluminescence

Indexed keywords

ANODIC OXIDATION; BAND STRUCTURE; ELECTROCHEMISTRY; ETCHING; MICROSTRUCTURE; MORPHOLOGY; PHOTOLUMINESCENCE; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY;

ELECTROCHEMICALLY ETCHED POROUS SILICON CARBIDE; TIME DEPENDENT PHOTOLUMINESCENCE;

SILICON CARBIDE;

EID: 0031121623     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09419-9     Document Type: Article

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