Smooth n-type GaN surfaces by photoenhanced wet etching

Applied Physics Letters

Volumn 72, Issue 5, 1998, Pages 560-562

  Youtsey, C ^a   Adesida, I ^a   Romano, L T ^b   Bulman, G ^c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROCHEMISTRY; ETCHING; PHOTOCHEMICAL REACTIONS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; SURFACE TREATMENT;

GALLIUM NITRIDE; MERCURY ARC LAMP ILLUMINATION; PHOTOENHANCED WET ETCHING; POTASSIUM HYDROXIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032472665     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120758     Document Type: Article

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