Comparative study of photoenhanced wet chemical etching and reactive ion etching of GaN epilayers grown on various substrates

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 1999, Pages 195-198

  Kinder, B M ^a   Tansley, T L ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY (HVPE); PHOTOENHANCED WET CHEMICAL ETCHING;

ALUMINA; DRY ETCHING; ELECTROLYTES; MIXTURES; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; ULTRAVIOLET RADIATION; VAPOR PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0032642029     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (11)