Wet chemical etching of GaN in H3PO4 with Al ions

Electrochemical and Solid-State Letters

Volumn 2, Issue 8, 1999, Pages 404-406

  Mynbaeva, M G ^a   Melnik, Yu V ^a,b   Kryganovskii, A K ^a   Mynbaev, K D ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b Technol and Devices Intl Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); DISSOLUTION; EPITAXIAL GROWTH; IONS; IRON; PHOSPHORIC ACID; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

DISLOCATION DENSITY; ORTHOPHOSPHORIC ACID; WET CHEMICAL ETCHING;

ETCHING;

EID: 0032648594     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390852     Document Type: Article

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