Preferential etching of SiC crystals

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1456-1458

  Yakimova, R ^a,b   Hylen A L ^a   Tuominen, M ^a,b   Syvajarvi M ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Outokumpu Semitronic AB   (Sweden)

Author keywords

Chemical; Defects; Etching; Preferential; SiC

Indexed keywords

EID: 0043229552     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00076-9     Document Type: Article

References (5)

1. J. Takahashi, M. Kanaya, Y. Fujiwara, J. Crystal Growth 135 (1994) 61.
2. M. Syväjärvi, R. Yakimova, E. Janzén, Growth, of SiC from liquid phase: wetting and dissolution of SiC, Diamond Relat. Mater, 6 (1997) 1266-1268.
3. K. Koga, Y. Fujikawa, Y. Ueda, T. Yamaguchi, Springer Proc. Phys. 71 (1992) 96.
4. K. Sangwal, Etching of Crystals: Theory, Experiment and Application, Elsevier Science B.V., Amsterdam, 1987, p. 260.
5. V.J. Jennings, Mater. Res. Bull. 4 (1969) 199.