Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages

  Kozawa, Takahiro ^a   Kachi, Tetsu ^a   Ohwaki, Takeshi ^a   Taga, Yasunori ^a   Koide, Norikatsu ^b   Koike, Masayoshi ^b  

^a Rd Management Section   (Japan)

^b Toyoda Gosei Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); ETCHING; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; POTASSIUM COMPOUNDS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION ETCH PITS; ETCH PIT DENSITY; GALLIUM NITRIDE; NOMARSKI MICROSCOPY; POTASSIUM HYDROXIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029732122     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836377     Document Type: Article

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