Highly anisotropic photoenhanced wet etching of n-type GaN

Applied Physics Letters

Volumn 71, Issue 15, 1997, Pages 2151-2153

  Youtsey, C ^a   Adesida, I ^a   Bulman, G ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001069324     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119365     Document Type: Article

References (14)

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