Wet etching of GaN grown by molecular beam epitaxy on Si(111)

Semiconductor Science and Technology

Volumn 15, Issue 10, 2000, Pages 996-100

  Palacios, T ^a   Calle, F ^a   Varela, M ^b   Ballesteros, C ^b   Monroy, E ^a   Naranjo, F B ^a   Sanchez Garcia M A ^a   Calleja, E ^a   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SUBSTRATES;

HIGH RESOLUTION TRANSITION; WET ETCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034300438     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/10/312     Document Type: Article

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