Electrochemical etching of highly conductive GaN single crystals

Journal of Crystal Growth

Volumn 222, Issue 4, 2001, Pages 735-740

  Nowak, G ^a   Xia, X H ^b   Kelly, J J ^b   Weyher, J L ^a,c   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UTRECHT UNIVERSITY   (Netherlands)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTROCHEMISTRY; ELECTRON TUNNELING; ETCHING; GALLIUM NITRIDE; MORPHOLOGY; POTASSIUM COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

ANODIC ETCHING; ELECTROCHEMICAL ETCHING; POTASSIUM HYDROXIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035251237     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00988-X     Document Type: Article

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