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Journal of the Electrochemical Society

Volumn 147, Issue 2, 2000, Pages 763-764

Crystallographic wet chemical etching of p-type GaN

(5) Stocker, D A a Goepfert, I D a Schubert, E F a Boutros, K S b Redwing, J M c

a BOSTON UNIVERSITY (United States)

b Epitronics/ATMI (United States)

c CHARLES STARK DRAPER LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; PHOSPHORIC ACID; POTASSIUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

AQUEOUS TETRAETHYLAMMONIUM HYDROXIDE; ARRHENIUS CHARACTERISTIC; CRYSTALLOGRAPHIC WET CHEMICAL ETCHING; ETHYLENE GLYCOL; GALLIUM NITRIDE;

ETCHING;

EID: 0034140367 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1393267 Document Type: Article

Times cited : (22)

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