Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors

Solid-State Electronics

Volumn 44, Issue 8, 2000, Pages 1361-1365

  Dimitrov, R ^a   Tilak, V ^a   Yeo, W ^a   Green, B ^a   Kim, H ^a   Smart, J ^a   Chumbes, E ^a   Shealy, J R ^a   Schaff, W ^a   Eastman, L F ^a   Miskys, C ^b   Ambacher, O ^b   Stutzmann, M ^b  

^a Cornell University   (United States)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METHANE; MOLECULAR BEAM EPITAXY; OXYGEN; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0033689618     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00085-X     Document Type: Article

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