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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2838-2841

Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems

(5) Stonas, A R a MacDonald, N C a Turner, K L a DenBaars, S P b Hu, E L b

a University of California (United States)

b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FABRICATION; GALLIUM NITRIDE; HETEROJUNCTIONS; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE MICROELECTROMECHANICAL SYSTEM; INDIUM GALLIUM NITRIDE; PHOTOELECTROCHEMICAL UNDERCUT ETCHING;

MICROELECTROMECHANICAL DEVICES;

EID: 0035519507 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1415508 Document Type: Article

Times cited : (43)

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