High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching

Applied Physics Letters

Volumn 77, Issue 18, 2000, Pages 2918-2920

  Zhu, T G ^a   Lambert, D J H ^a   Shelton, B S ^a   Wong, M M ^a   Chowdhury, U ^a   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001276713     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1322050     Document Type: Article

References (14)

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13. r=-356 V was reported for a Schottky diode with a 4-μm-thick i layer but no reverse current density was given at this voltage.
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