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Journal of Crystal Growth

Volumn 181, Issue 3, 1997, Pages 229-240

Sublimation growth of 6H- and 4H-SiC single crystals in the [1 1̄ 0 0] and [1 1 2̄ 0] directions

(4) Takahashi, Jun a Ohtani, Noboru a Katsuno, Masakazu a Shinoyama, Seiji a

a NIPPON STEEL CORPORATION (Japan)

Author keywords

Growth direction; Polytype; SiC single crystal; Sublimation growth

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; ELECTRON TRANSPORT PROPERTIES; SILICON CARBIDE; SINGLE CRYSTALS; STACKING FAULTS; SUBLIMATION;

POLYTYPE CRYSTALS; VAN DER PAUW MEASUREMENTS;

CRYSTAL GROWTH;

EID: 0031272732 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00289-3 Document Type: Article

Times cited : (106)

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