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Volumn 4592, Issue , 2001, Pages 104-110

Simple wet etching of GaN

Author keywords

Gallium nitride; GaN; PEC; Processing; Surface; UV; Wet etch

Indexed keywords

ETCHING; LIGHTING; OXIDATION; PH EFFECTS; SOLUTIONS;

EID: 0035772538     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.448955     Document Type: Conference Paper
Times cited : (7)

References (12)
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    • 0032067341 scopus 로고    scopus 로고
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    • Q.Z. Lin & S.S. Lau, "A review of the metal-GaN contact technology", Solid State Electron., 42, pp. 677-691, 1998.
    • (1998) Solid State Electron. , vol.42 , pp. 677-691
    • Lin, Q.Z.1    Lau, S.S.2
  • 6
    • 0000884005 scopus 로고    scopus 로고
    • Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces
    • C.I. Wu & A. Kahn, "Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces", J. Vac. Sci. Technol. B, 16(4), pp. 2218-2223, 1998.
    • (1998) J. Vac. Sci. Technol. B , vol.16 , Issue.4 , pp. 2218-2223
    • Wu, C.I.1    Kahn, A.2
  • 7
    • 0030103958 scopus 로고    scopus 로고
    • Room-temperature photoenhanced wet etching of GAN
    • M.S. Minsky, A.M. White, E.L. Hu, "Room-temperature photoenhanced wet etching of GAN", Appl. Phys. Lett., 68, pp.1531-1533, 1996.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 1531-1533
    • Minsky, M.S.1    White, A.M.2    Hu, E.L.3
  • 10
    • 0000008175 scopus 로고    scopus 로고
    • Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostmcture field-effect transistors
    • H. Maher, D.W. DiSanto, G. Soerensen, C.R. Bolognesi, H. Tang & J.B. Webb, "Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostmcture field-effect transistors", Appl. Phys. Lett., 77, pp. 3833-3835, 2000.
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 3833-3835
    • Maher, H.1    DiSanto, D.W.2    Soerensen, G.3    Bolognesi, C.R.4    Tang, H.5    Webb, J.B.6
  • 12
    • 0032472665 scopus 로고    scopus 로고
    • Smooth n-type GaN surfaces by photoenhanced wet etching
    • C. Youtsey, I. Adesida, L.T. Romano & G. Bulman, "Smooth n-type GaN surfaces by photoenhanced wet etching", Appl. Phys. Lett., 72, pp. 560-562, 1998.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 560-562
    • Youtsey, C.1    Adesida, I.2    Romano, L.T.3    Bulman, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.