Interaction of GaN epitaxial layers with atomic hydrogen

Applied Surface Science

Volumn 235, Issue 3, 2004, Pages 267-273

  Losurdo, M ^a   Giangregorio, M M ^a   Capezzuto, P ^a   Bruno, G ^a   Namkoong, G ^b   Doolittle, W A ^b   Brown, A S ^c  

^a CNR   (Italy)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Duke University   (United States)

Author keywords

Ellipsometry; GaN; Interaction with atomic hydrogen; Surface reactivity

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; EPITAXIAL GROWTH; HYDROGEN; ION BOMBARDMENT; PASSIVATION; PROBES; SAPPHIRE; THIN FILMS;

ELECTRICAL PROBES; INTERACTION WITH ATOMIC HYDROGEN; SURFACE DEFECTS; SURFACE REACTIVITY;

GALLIUM NITRIDE;

EID: 4243066334     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.152     Document Type: Conference Paper

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