Gate-to-drain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs

Electronics Letters

Volumn 38, Issue 16, 2002, Pages 921-923

  DiSanto, D W ^a   Kwan, A C ^a   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ETCHING; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

HETEROSTRUCTURE TRANSISTORS FIELD EFFECT TRANSISTORS (HFET); WET ETCHING;

FIELD EFFECT TRANSISTORS;

EID: 0036684603     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020641     Document Type: Article

References (8)

1. Undoped AlGaN/GaN HEMTs for microwave power amplification
2. T and 1.7-W/mm output-power at 10 GHz
3. Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors
4. Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors
5. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
6. Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs
7. Electroluminescence in AlGaN/GaN high electron mobility transistors under high bias
8. T of millimeter-wave MODFETs