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Volumn 147, Issue 9, 2000, Pages 3519-3522

Anisotropic etching of SiC

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; CRYSTAL GROWTH; DISINTEGRATION; DISLOCATIONS (CRYSTALS); DISSOLUTION; ETCHING; MELTING; POTASSIUM COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS;

EID: 0034272440     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393930     Document Type: Article
Times cited : (40)

References (16)
  • 6
    • 12944331671 scopus 로고
    • Ph.D. Thesis, Kyoto University, Kyoto, Japan
    • T. Kimoto, Ph.D. Thesis, Kyoto University, Kyoto, Japan (1995).
    • (1995)
    • Kimoto, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.