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Volumn 147, Issue 9, 2000, Pages 3519-3522
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Anisotropic etching of SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ANISOTROPY;
CRYSTAL GROWTH;
DISINTEGRATION;
DISLOCATIONS (CRYSTALS);
DISSOLUTION;
ETCHING;
MELTING;
POTASSIUM COMPOUNDS;
SILICON CARBIDE;
THERMAL EFFECTS;
MICROPIPES;
SINGLE CRYSTALS;
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EID: 0034272440
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1393930 Document Type: Article |
Times cited : (40)
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References (16)
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