Bulk AlN crystal growth by direct heating of the source using microwaves

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 168-174

  Zhuang, D ^a   Edgar, J H ^a   Liu, B ^a   Huey, H E ^b   Jiang, H X ^c   Lin, J Y ^c   Kuball, M ^d   Mogal, F ^e   Chaudhuri, J ^e   Rek, Z ^f  

^a Sunflower Networking Group   (United States)

^b Micramics Inc   (United States)

^c KANSAS STATE UNIVERSITY   (United States)

^d UNIVERSITY OF BRISTOL   (United Kingdom)

^e Wichita State University   (United States)

^f SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

A1. Characterization; A1. Etching; A1. X ray topography; A2. Single crystal growth; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC CONDUCTIVITY; ENERGY GAP; ETCHING; FILM GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MICROWAVES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SAPPHIRE; SINGLE CRYSTALS; SODIUM COMPOUNDS; THERMAL CONDUCTIVITY; THERMAL EXPANSION;

POWER TRANSISTORS; SINGLE CRYSTAL GROWTH; X RAY TOPOGRAPHY;

CRYSTAL GROWTH;

EID: 0842330016     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.10.080     Document Type: Article

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