High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

Electronics Letters

Volumn 36, Issue 3, 2000, Pages 265-267

  Lee, Won Sang ^a   Choi, Yoon Ho ^a   Chung, Ki Woong ^a   Moon, Dong Chan ^b   Shin, Moo Whan ^c  

^a LG   (South Korea)

^b Kwangwoon University   (South Korea)

^c Myong Ji University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MASKS; MICROWAVE DEVICES; PERFORMANCE; PHOTOCHEMICAL REACTIONS; PHOTORESISTS; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE; ILLUMINATION INTENSITY; MICROWAVE POWER DEVICES; PHOTOELECTROCHEMICAL ETCHING;

MESFET DEVICES;

EID: 0034598684     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000215     Document Type: Article

References (12)

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