Gate recessing of GaN MESFETs using photoelectrochemical wet etching

Electronics Letters

Volumn 35, Issue 24, 1999, Pages 2140-2141

  Ping, A T ^a   Selvanathan, D ^a   Youtsey, C ^a,c   Piner, E ^b   Redwing, J ^b   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Epitronics/ATMI   (United States)

^c Nanovation Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM COMPOUNDS;

PHOTOELECTROCHEMICAL WET ETCHING;

MESFET DEVICES;

EID: 0033221780     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991341     Document Type: Article

References (5)

1. SHEPPARD, S.T., DOVERSPIKE, K., PRIBBLE, W.L., ALLEN, S.T., PALMOUR, J.W., KEHIAS, L.T., and JENKINS, T.J.: 'High power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates', IEEE Electron Device. Lett., 1999, 20, pp. 161-163
2. THIBEAULT, B.J., KELLER, B.P., WU, Y.-F., FINI, P., MISHRA, U.K., NGUYEN, C., NGUYEN, N.X., and LE, M.: 'High performance and large area flip-chip bonded AlGaN/GaN MODFETs'. IEDM Tech. Dig., 1997, pp. 569-572
3. MINSKY, M.S., WHITE, M., and HU, E.L.: 'Room-temperature photoenhanced wet etching of GaN', Appl. Phys. Lett., 1996, 68, pp. 1531-1533
4. YOUTSEY, C., ADESIDA, I., and BULMAN, G.: 'Broad-area photoelectrochemical etching of GaN', Electron. Lett., 1997, 33, pp. 245-246
5. YOUTSEY, C., ADESIDA, I., ROMANO, L.T., and BULMAN, G.: 'Smooth n-type GaN surfaces by photoenhanced wet etching', Appl. Phys. Lett., 1998, 72, pp. 560-562