Recent advances in defect-selective etching of GaN

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 151-156

  Weyher, J L ^a,b   Brown, P D ^c   Rouviere J L ^d   Wosinski, T ^e   Zauner, A R A ^a   Grzegory, I ^b  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d CEA GRENOBLE   (France)

^e INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CAUSTIC SODA; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ETCHING; MAGNESIUM; NITRIDES; PHOSPHORIC ACID; POTASSIUM COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SULFURIC ACID;

DEFECT SELECTIVE ETCHING; GALLIUM NITRIDE; ORTHODOX ETCHING; PHOTOELECTROCHEMICAL ETCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033903591     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00669-7     Document Type: Article

References (19)

1. Shintani A., Minagawa S. J. Electrochem. Soc. 123:1976;706.
2. Iwaya M., Takeuchi T., Yamaguchi S., Wetzel Ch., Amano H., Akasaki I. Jpn. J. Appl. Phys. 37:1998;L316.
3. Hong S.K., Kim B.J., Park H.S., Park Y., Yoon S.Y., Kim T.I. J. Cryst. Growth. 192:1998;275.
4. Stocker D.A., Schubert E.F., Redwing J.M. Appl. Phys. Lett. 73:1998;2654.
5. Chu T.L., Ito K., Smeltzer R.K., Chu S.S.C. J. Electrochem. Soc. 121:1974;159.
6. Kozawa T., Kachi T., Ohwaki T., Taga Y., Koide N., Koike M. J. Electrochem. Soc. 143:1996;L17.
7. Yamamoto K., Ishikawa H., Egawa T., Jimbo T., Umeno M. J. Cryst. Growth. 189/190:1998;575.
8. Rouvière J.L., Weyher J.L., Seelmann-Eggebert M., Porowski S. Appl. Phys. Lett. 73:1998;668.
9. Rotter T., Uffmann D., Ackermann J., Aderhold J., Stemmer J., Graul J. Mater. Res. Soc. Symp. Proc. 482:1997;1003.
10. Youtsey C., Adesida I., Bulman G. Appl. Phys. Lett. 71:1997;2151.
11. Youtsey C., Romano L.T., Adesida I. Appl. Phys. Lett. 73:1998;797.
12. Youtsey C., Romano L.T., Molnar R.J., Adesida I. Appl. Phys. Lett. 74:1999;3537.
13. van de Ven J., Weyher J.L., van den Meerakker J.E.A.M., Kelly J.J. J. Electrochem. Soc. 133:1986;799.
14. Porowski S. J. Cryst. Growth. 166:1996;583.
15. Weyher J.L., Brown P.D., Zauner A.R.A., Müller S., Boothroyd C.B., Foord D.T., Hageman P.R., Humphreys C.J., Larsen P.K., Grzegory I., Porowski S. J. Cryst. Growth. 204:1999;419.
16. J.A. Kozubowski, J. Borysiuk, H.W. Zandbergen, I. Grzegory, J.L. Weyher, S. Porowski, Proceeding of the 10th Conference on Electron Microscopy of Solids, Warsaw-Serock, 20-23 September 1999, pp. 413-418.
17. Grzegory I., Kozubowski J.A., Borysiuk J., Weyher J.L., Bockowski M., Lucznik B., Porowski S. Proceedings of the International Conference on Nitride Semicond. Montpellier, 5-9 July 1999. Phys. Stat. Sol. (b). 216:1999;537.
18. Weyher J.L. Mahajan S. Handbook on Semiconductors. Vol. 3:1994;995-1031 Elsevier, Amsterdam.
19. J.L. Weyher, C. Frigeri, K. Schohe, S.K. Krawczyk, T. Wosinski, R. Fornari, Institute of Physics Conference Series, Vol. 135, IOP Publishing Ltd., Amsterdam, 1994, p. 225.