Electrochemical characterization of p-type hexagonal SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 619-622

  Kayambaki, M ^a   Zekentes, K ^a   Tsagaraki, K ^a   Pernot, E ^b   Yakimova, R ^c  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DISLOCATIONS (CRYSTALS); ELECTROLYSIS; EPITAXIAL GROWTH; ETCHING; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SUBSTRATES; VOLTAGE MEASUREMENT;

ELECTROCHEMICAL ETCHING; ETCH PIT;

SILICON CARBIDE;

EID: 0035119656     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.619     Document Type: Article

References (6)

1. M. Kayambaki, K. Zekentes, Mat. Sci. Forum 338-342 (2000), p.1061.
2. M. Kayambaki, K. Tsagaraki, V. Cimalla, K. Zekentes, and R. Yakimova. J. Electrochem. Soc. 147 (2000), p. 2744.
3. J. S. Shor and A. D. Kurtz. J. Electrochem. Soc. 141 (1994), p. 778.
4. C. E. Stutz, J. Electron. Mat. 27 (1998), p. L81.
5. M. Syväjärvi, R. Yakimova, M. Tuominen, A. Kakanakova-Georgieva, M. F. MacMillan, A. Henry, Q. Wahab, E. Janzén, J. Cryst. Growth 197 (1999), p. 155.
6. J. Takahashi, M. Kanaya and Y. Fujiwara, J. Cryst. Growth 135 (1994), p. 6