Dopant-selective photoenhanced wet etching of GaN

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 282-287

  Youtsey, C ^a   Bulman, G ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Dopant selective etching; Gallium nitride (GaN); Photoelectrochemical (PEC) etching; Photoenhanced etching

Indexed keywords

EID: 3242841752     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0400-0     Document Type: Article

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