Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

Applied Physics Letters

Volumn 68, Issue 18, 1996, Pages 2541-2543

  Martin, G ^a   Botchkarev, A ^a   Rockett, A ^a   Morkoc H ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; CALCULATIONS; ELECTRIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; NITRIDES; PIEZOELECTRICITY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STRAIN; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM NITRIDE; CORE LEVELS; FORWARD BACKWARD ASYMMETRY; GALLIUM NITRIDE; INDIUM NITRIDE; PIEZOELECTRIC STRAIN EFFECT; VALENCE BAND DISCONTINUITIES;

HETEROJUNCTIONS;

EID: 0030127795     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116177     Document Type: Article

References (9)

1. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B AIP 10, 1237 (1992).
2. G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, H. Morkoç, W. R. L. Lambrecht, and B. Segall, Appl. Phys. Lett. AIP 65, 610 (1994).
3. M. E. Lin, B. Sverdlov, G. L. Zhou, and H. Morkoç, Appl. Phys. Lett. AIP 62, 3479 (1993).
4. This method is described in detail by R. W. Grant, E. A. Kraut, J. R. Waldrop, and S. P. Kowalczyk, in Heterojunction Band Discontinuities, edited by F. Capasso and G. Margaritondo (North-Holland Physics, Amsterdam, 1987), Chap. 4.
5. Calculated densities of states were graciously provided by W. R. L. Lambrecht; for details see Ref. 2, which he coauthored.
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