Anisotropy of dissolution and defect revealing on SiC surfaces

Journal of Physics Condensed Matter

Volumn 11, Issue 49, 1999, Pages 10041-10046

  Syvajarvi M ^a   Yakimova, R ^a,b   Hylen A L ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013276092     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/49/322     Document Type: Article

References (6)

1. Tuominen M, Yakimova R, Prieur E, Ellison A, Tuomi T, Vehanen A and Janzen E 1997 Diamond Relat. Mater. 6 1272
2. Takahashi J, Kanaya M and Fujiwara Y 1994 J. Cryst. Growth 135 61
3. Horn F H 1952 Phil. Mag. 43 1210
4. Cabrera N and Levine M M 1956 Phil. Mag. 1 450
5. Sangwal K 1987 Etching of Crystals: Theory, Experiment and Application (Amsterdam: North-Holland) p 260
6. Katsuno M, Ohtani N, Takahshi J, Yashiro H, Kanaya M and Shinoyama S 1998 Mater. Sci. Forum 264-268 837