Advantages of AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 8, 2001, Pages 4785-4788

  Ide, Toshihide ^a   Shimizu, Mitsuaki ^b   Suzuki, Akira ^c   Shen, Xu Qiang ^b   Okumura, Hajime ^b   Nemoto, Toshio ^a  

^a MEIJI UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c TOKAI UNIVERSITY   (Japan)

Author keywords

Heterostructure field effect transistor; Maximum transconductance; Metal insulator semiconductor field effect transistor; Wet chemical etching

Indexed keywords

ALUMINUM NITRIDE; ELECTRON BEAMS; GALLIUM NITRIDE; MISFET DEVICES; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

MOSFET DEVICES;

EID: 0035414480     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4785     Document Type: Article

References (11)