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Volumn 43, Issue 10, 1999, Pages 1909-1927

Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; ENERGY GAP; HETEROJUNCTIONS; MICROWAVE AMPLIFIERS; NITRIDES; PIEZOELECTRICITY; POLARIZATION; SWITCHING CIRCUITS; TRANSPORT PROPERTIES; ULTRAVIOLET RADIATION;

EID: 0033316906     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00146-X     Document Type: Review
Times cited : (101)

References (59)
  • 15
    • 0001747473 scopus 로고    scopus 로고
    • Beyond SiC! III-V nitride based heterostructures and devices
    • In: Park YS, editor. Academic Press
    • Morkoç H. Beyond SiC! III-V nitride based heterostructures and devices. In: Park YS, editor. SiC materials and devices. Willardson and Beer series, vol. 52. Academic Press, 1998:307-94.
    • (1998) SiC Materials and Devices. Willardson and Beer Series , vol.52 , pp. 307-394
    • Morkoç, H.1
  • 46
    • 84889333084 scopus 로고    scopus 로고
    • Effect of device temperature on rf FET power density
    • ICSI, August Stockholm, Sweden. Materials science forum, Trans Publications
    • Weitzel C, Pond L, Moore K, Bhatnagar M. Effect of device temperature on rf FET power density. In: Proc. of silicon carbide, III-nitrides and related materials, ICSI, August 1997, Stockholm, Sweden. Materials science forum, vols. 264-268. Trans Publications, 1998:907-12.
    • (1997) In: Proc. of Silicon Carbide, III-nitrides and Related Materials , vol.264-268 , pp. 907-912
    • Weitzel, C.1    Pond, L.2    Moore, K.3    Bhatnagar, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.