-
4
-
-
21544461610
-
-
Morkoç H., Strite S., Gao G.B., Lin M.E., Sverdlov B., Burns M. J Appl Phys Rev. 76:(3):1994;1363-1398.
-
(1994)
J Appl Phys Rev
, vol.76
, Issue.3
, pp. 1363-1398
-
-
Morkoç, H.1
Strite, S.2
Gao, G.B.3
Lin, M.E.4
Sverdlov, B.5
Burns, M.6
-
6
-
-
0015628441
-
-
Duffy M.T., Wang C.C., O'Clock G.D., McFarlane S.H. III, Zanzucchi P.J. J Electr Mat. 2:1973;359.
-
(1973)
J Electr Mat
, vol.2
, pp. 359
-
-
Duffy, M.T.1
Wang, C.C.2
O'Clock, G.D.3
McFarlane S.H. III4
Zanzucchi, P.J.5
-
8
-
-
0001095153
-
-
Xu G.Y., Salvador A., Kim W., Fan Z., Lu C., Tang H., Morkoç H., Smith G., Estes M., Goldenberg B., Yang W., Krishnankutty S. Appl Phys Lett. 71:(15):1997;2154-2156.
-
(1997)
Appl Phys Lett
, vol.71
, Issue.15
, pp. 2154-2156
-
-
Xu, G.Y.1
Salvador, A.2
Kim, W.3
Fan, Z.4
Lu, C.5
Tang, H.6
Morkoç, H.7
Smith, G.8
Estes, M.9
Goldenberg, B.10
Yang, W.11
Krishnankutty, S.12
-
13
-
-
0001698158
-
-
Nakamura S., Senoh M., Nagahama N., Iwara N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. Jpn J Appl Phys. 38:1997;L1578.
-
(1997)
Jpn J Appl Phys
, vol.38
, pp. 1578
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, N.3
Iwara, N.4
Yamada, T.5
Matsushita, T.6
Kiyoku, H.7
Sugimoto, Y.8
Kozaki, T.9
Umemoto, H.10
Sano, M.11
Chocho, K.12
-
15
-
-
0001747473
-
Beyond SiC! III-V nitride based heterostructures and devices
-
In: Park YS, editor. Academic Press
-
Morkoç H. Beyond SiC! III-V nitride based heterostructures and devices. In: Park YS, editor. SiC materials and devices. Willardson and Beer series, vol. 52. Academic Press, 1998:307-94.
-
(1998)
SiC Materials and Devices. Willardson and Beer Series
, vol.52
, pp. 307-394
-
-
Morkoç, H.1
-
16
-
-
0032668826
-
-
Sheppard S.T., Doverspike K., Pribble W.L., Allen S.T., Palmour J.W., Kehias L.T., Jenkins T.J. IEEE Electron Dev Lett. 20:(4):1999;161.
-
(1999)
IEEE Electron Dev Lett
, vol.20
, Issue.4
, pp. 161
-
-
Sheppard, S.T.1
Doverspike, K.2
Pribble, W.L.3
Allen, S.T.4
Palmour, J.W.5
Kehias, L.T.6
Jenkins, T.J.7
-
17
-
-
0031999751
-
-
Wu Y.-F., Keller B.P., Fini P., Keller S., Jenkins T.J., Kehias L.T., Denbaars S.P., Mishra U.K. IEEE Electron Dev Lett. 19:(2):1998;50-53.
-
(1998)
IEEE Electron Dev Lett
, vol.19
, Issue.2
, pp. 50-53
-
-
Wu, Y.-F.1
Keller, B.P.2
Fini, P.3
Keller, S.4
Jenkins, T.J.5
Kehias, L.T.6
Denbaars, S.P.7
Mishra, U.K.8
-
18
-
-
0032001933
-
-
Ping A.T., Chen Q., Yang J.W., Khan M.A., Adesida I. IEEE Electron Device Lett. 19:(2):1998;54-56.
-
(1998)
IEEE Electron Device Lett
, vol.19
, Issue.2
, pp. 54-56
-
-
Ping, A.T.1
Chen, Q.2
Yang, J.W.3
Khan, M.A.4
Adesida, I.5
-
19
-
-
0032098587
-
-
Sullivan G.J., Chen M.Y., Higgins J.A., Yang J.W., Chen Q., Pierson R.L., McDermott B.T. IEEE Electron Dev Lett. 19:1998;198-199.
-
(1998)
IEEE Electron Dev Lett
, vol.19
, pp. 198-199
-
-
Sullivan, G.J.1
Chen, M.Y.2
Higgins, J.A.3
Yang, J.W.4
Chen, Q.5
Pierson, R.L.6
McDermott, B.T.7
-
20
-
-
0001598226
-
-
Takeuchi T., Wetzel C., Yamaguchi S., Sakai H., Amano H., Akasaki I., Kaneko Y., Nakagawa S., Yamaoka Y., Yamada N. Appl Phys Lett. 73:1998;1691.
-
(1998)
Appl Phys Lett
, vol.73
, pp. 1691
-
-
Takeuchi, T.1
Wetzel, C.2
Yamaguchi, S.3
Sakai, H.4
Amano, H.5
Akasaki, I.6
Kaneko, Y.7
Nakagawa, S.8
Yamaoka, Y.9
Yamada, N.10
-
21
-
-
0001004335
-
-
Im J.S., Kollmer H., Off J., Sohmer A., Scholz F., Hangleiter A. Phys Rev B. 57:1998;R9435.
-
(1998)
Phys Rev B
, vol.57
, pp. 9435
-
-
Im, J.S.1
Kollmer, H.2
Off, J.3
Sohmer, A.4
Scholz, F.5
Hangleiter, A.6
-
22
-
-
0001598226
-
-
Takeuchi T., Wetzel C., Yamaguchi S., Sakai H., Amano H., Akasaki I., Kaneko Y., Nakagawa S., Yamaoka Y., Yamada N. Appl Phys Lett. 73:1998;1691.
-
(1998)
Appl Phys Lett
, vol.73
, pp. 1691
-
-
Takeuchi, T.1
Wetzel, C.2
Yamaguchi, S.3
Sakai, H.4
Amano, H.5
Akasaki, I.6
Kaneko, Y.7
Nakagawa, S.8
Yamaoka, Y.9
Yamada, N.10
-
23
-
-
85031588910
-
-
[in press]
-
Kim HS, Lin JY, Jiang HX, Chow WW, Botchkarev AE, Morkoç H. Appl Phys Lett, 1999 [in press].
-
(1999)
Appl Phys Lett
-
-
Kim, H.S.1
Lin, J.Y.2
Jiang, H.X.3
Chow, W.W.4
Botchkarev, A.E.5
Morkoç, H.6
-
24
-
-
85031585468
-
-
[in press]
-
Leroux M, Grandjean N, Massies J, Gil B, Lefebvre P, Bigenwald P. Phys Rev B, 1999 [in press].
-
(1999)
Phys Rev B
-
-
Leroux, M.1
Grandjean, N.2
Massies, J.3
Gil, B.4
Lefebvre, P.5
Bigenwald, P.6
-
25
-
-
85031590395
-
-
[in press]
-
Cingolani R, Botchkarev A, Tang H, Morkoç H, Coliì G, Lomascolo M, Di Carlo A, Lugli P. Phys Rev B, 1999 [in press].
-
(1999)
Phys Rev B
-
-
Cingolani, R.1
Botchkarev, A.2
Tang, H.3
Morkoç, H.4
Coliì, G.5
Lomascolo, M.6
Di Carlo, A.7
Lugli, P.8
-
26
-
-
0031268156
-
-
Yu E.T., Sullivan G.J., Asbeck P.M., Wang C.D., Qiao D., Lau S.S. Appl Phys Lett. 71:1997;2794.
-
(1997)
Appl Phys Lett
, vol.71
, pp. 2794
-
-
Yu, E.T.1
Sullivan, G.J.2
Asbeck, P.M.3
Wang, C.D.4
Qiao, D.5
Lau, S.S.6
-
27
-
-
0031551223
-
-
Asbeck P.M., Yu E.T., Lau S.S., Sullivan G.J., Van Hove J., Redwing J. Electr Lett. 33:(14):1997;1230.
-
(1997)
Electr Lett
, vol.33
, Issue.14
, pp. 1230
-
-
Asbeck, P.M.1
Yu, E.T.2
Lau, S.S.3
Sullivan, G.J.4
Van Hove, J.5
Redwing, J.6
-
34
-
-
0000332363
-
-
Martin G.A., Strite S., Botchkarev A., Agarwal A., Rockett A., Morkoç H., Lambrecht W.R.L., Segall B. Appl Phys Lett. 65:1994;610.
-
(1994)
Appl Phys Lett
, vol.65
, pp. 610
-
-
Martin, G.A.1
Strite, S.2
Botchkarev, A.3
Agarwal, A.4
Rockett, A.5
Morkoç, H.6
Lambrecht, W.R.L.7
Segall, B.8
-
35
-
-
0030127795
-
-
Martin G.A., Botchkarev A., Agarwal A., Rockett A., Morkoç H. Appl Phys Lett. 68:1996;2541.
-
(1996)
Appl Phys Lett
, vol.68
, pp. 2541
-
-
Martin, G.A.1
Botchkarev, A.2
Agarwal, A.3
Rockett, A.4
Morkoç, H.5
-
37
-
-
85031584534
-
-
[in press]
-
Gil B, Lefebvre P, Allègre J, Mathieu H, Grandjean N, Leroux M, Massies J, Bigenwald P, Christol P. Phys Rev B, 1999 [in press].
-
(1999)
Phys Rev B
-
-
Gil, B.1
Lefebvre, P.2
Allègre, J.3
Mathieu, H.4
Grandjean, N.5
Leroux, M.6
Massies, J.7
Bigenwald, P.8
Christol, P.9
-
40
-
-
85031581217
-
-
[in press]
-
Della Sala F, DiCarlo A, Lugli P, Bernardini F, Fiorentini V, Scholz R, Jancu JM. Appl Phys Lett, 1999 [in press].
-
(1999)
Appl Phys Lett
-
-
Della Sala, F.1
Dicarlo, A.2
Lugli, P.3
Bernardini, F.4
Fiorentini, V.5
Scholz, R.6
Jancu, J.M.7
-
42
-
-
85031583600
-
-
Patent US, #4,827,320
-
Morkoç H, Klem J, Masselink WT, Herderson T, Ketterson A. Semiconductor device with strained InGaAs layer. Patent US, #4,827,320.
-
Semiconductor Device with Strained InGaAs Layer
-
-
Morkoç, H.1
Klem, J.2
Masselink, W.T.3
Herderson, T.4
Ketterson, A.5
-
43
-
-
0029634689
-
-
Özgür A., Kim W., Fan Z., Mohammad S.N., Botchkarev A., Salvador A., Sverdlov B., Morkoç H. Electr Lett. 31:(16):1995;1389-1390.
-
(1995)
Electr Lett
, vol.31
, Issue.16
, pp. 1389-1390
-
-
Özgür, A.1
Kim, W.2
Fan, Z.3
Mohammad, S.N.4
Botchkarev, A.5
Salvador, A.6
Sverdlov, B.7
Morkoç, H.8
-
46
-
-
84889333084
-
Effect of device temperature on rf FET power density
-
ICSI, August Stockholm, Sweden. Materials science forum, Trans Publications
-
Weitzel C, Pond L, Moore K, Bhatnagar M. Effect of device temperature on rf FET power density. In: Proc. of silicon carbide, III-nitrides and related materials, ICSI, August 1997, Stockholm, Sweden. Materials science forum, vols. 264-268. Trans Publications, 1998:907-12.
-
(1997)
In: Proc. of Silicon Carbide, III-nitrides and Related Materials
, vol.264-268
, pp. 907-912
-
-
Weitzel, C.1
Pond, L.2
Moore, K.3
Bhatnagar, M.4
-
50
-
-
0030822317
-
-
Binari S., Redwing J.M., Kelner G., Kruppa W. Electron Lett. 33:(3):1997;242-243.
-
(1997)
Electron Lett
, vol.33
, Issue.3
, pp. 242-243
-
-
Binari, S.1
Redwing, J.M.2
Kelner, G.3
Kruppa, W.4
-
51
-
-
0031075210
-
-
Moore K.E., Weitzel C.E., Nordquist K.J., Pond L.L. III, Palmour J.W., Allen S., Carter C.H. Jr. IEEE Electron Dev Lett. 18:1997;69-70.
-
(1997)
IEEE Electron Dev Lett
, vol.18
, pp. 69-70
-
-
Moore, K.E.1
Weitzel, C.E.2
Nordquist, K.J.3
Pond L.L. III4
Palmour, J.W.5
Allen, S.6
Carter C.H., Jr.7
-
52
-
-
0032683491
-
-
[in press]
-
Xu JJ, Wu Y-F, Keller S, Parish G, Thibeault BJ, Hekman S, Mishra UK, York RA. IEEE Microwave Guided Wave Lett, 1999 [in press].
-
(1999)
IEEE Microwave Guided Wave Lett
-
-
Xu, J.J.1
Wu, Y.-F.2
Keller, S.3
Parish, G.4
Thibeault, B.J.5
Hekman, S.6
Mishra, U.K.7
York, R.A.8
-
53
-
-
0001283903
-
-
Look D.C., Reynolds D.C., Kim W., Aktas Ö., Botchkarev A., Salvador A., Morkoç H. J Appl Phys. 80:(5):1996;2960-2962.
-
(1996)
J Appl Phys
, vol.80
, Issue.5
, pp. 2960-2962
-
-
Look, D.C.1
Reynolds, D.C.2
Kim, W.3
Aktas, Ö.4
Botchkarev, A.5
Salvador, A.6
Morkoç, H.7
-
55
-
-
85031596578
-
-
[in press]
-
Dimitrov R, Mitchell A, Wittmer L, Ambacher O, Stutzmann M. Appl Phys Lett, 1999 [in press].
-
(1999)
Appl Phys Lett
-
-
Dimitrov, R.1
Mitchell, A.2
Wittmer, L.3
Ambacher, O.4
Stutzmann, M.5
-
57
-
-
85031591528
-
-
[in press]
-
Ambacher O., Smart J., Shealy J.R., Weimann N.G., Chu K., Murphy M., Schaff W.J., Eastman L.F. J Appl Phys. 85:1999;. [in press].
-
(1999)
J Appl Phys
, vol.85
-
-
Ambacher, O.1
Smart, J.2
Shealy, J.R.3
Weimann, N.G.4
Chu, K.5
Murphy, M.6
Schaff, W.J.7
Eastman, L.F.8
-
58
-
-
0000461322
-
-
Gaska R., Shur M.S., Bykhovski D., Orlov A.O., Snider G.L. Appl Phys Lett. 74:(2):1999;287.
-
(1999)
Appl Phys Lett
, vol.74
, Issue.2
, pp. 287
-
-
Gaska, R.1
Shur, M.S.2
Bykhovski, D.3
Orlov, A.O.4
Snider, G.L.5
-
59
-
-
0000118790
-
-
Li L.K., Alperin J., Wang W.I., Look D.C., Reynolds D.C. J Vac Sci Technol B. 16:1998;1275.
-
(1998)
J Vac Sci Technol B
, vol.16
, pp. 1275
-
-
Li, L.K.1
Alperin, J.2
Wang, W.I.3
Look, D.C.4
Reynolds, D.C.5
|