Photoenhanced wet chemical etching of n+-doped GaN

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 298-302

  Skriniarova J ^a   Van der Hart, A ^b   Bochem, H P ^b   Fox, A ^b   Kordos P ^b  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Anisotropic etching; Etching; Gallium nitride

Indexed keywords

ANISOTROPY; ELECTROCHEMISTRY; ETCHING; POTASSIUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SOLUTIONS; SURFACE ROUGHNESS;

PHOTOELECTROCHEMICAL ETCHING (PEC);

GALLIUM NITRIDE;

EID: 13444288633     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01040-6     Document Type: Conference Paper

References (16)