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Volumn 146, Issue 4, 1999, Pages 1565-1569

Interfacial properties in liquid phase growth of SiC

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DISSOLUTION; EPITAXIAL GROWTH; INTERFACIAL ENERGY; MORPHOLOGY; OPTICAL MICROSCOPY; SURFACE TENSION; THERMAL EFFECTS; WETTING;

EID: 0342889818     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391805     Document Type: Article
Times cited : (37)

References (17)
  • 6
    • 0003475786 scopus 로고
    • North-Holland, Amsterdam
    • K. Sangwal, in Etching of Crystals, p. 335, North-Holland, Amsterdam (1987).
    • (1987) Etching of Crystals , pp. 335
    • Sangwal, K.1
  • 7
    • 0344608765 scopus 로고
    • D. T. J. Hurle, Editor, North-Holland, Amsterdam
    • I. Sunagawa, in Handbook of Crystal Growth, D. T. J. Hurle, Editor, p. 29, North-Holland, Amsterdam (1994).
    • (1994) Handbook of Crystal Growth , pp. 29
    • Sunagawa, I.1
  • 15
    • 0344177061 scopus 로고
    • C. T. Horowitz, Editor, Academic Press, London
    • K. A. Gschneidner, Jr., in Scandium, C. T. Horowitz, Editor, p. 105, Academic Press, London (1975).
    • (1975) Scandium , pp. 105
    • Gschneidner K.A., Jr.1
  • 17
    • 0344608764 scopus 로고
    • Ph.D. Thesis, p, 118, Kyoto University, Kyoto, Japan
    • T. Kimoto, Ph.D. Thesis, p, 118, Kyoto University, Kyoto, Japan (1995).
    • (1995)
    • Kimoto, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.