Structural defects in α-SiC single crystals grown by the modified-Lely method

Journal of Crystal Growth

Volumn 167, Issue 3-4, 1996, Pages 596-606

  Takahashi, Jun ^a   Ohtani, Noboru ^a   Kanaya, Masatoshi ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

LANG METHOD; MODIFIED LELY METHOD; STRUCTURAL DEFECTS; TRANSMISSION TOPOGRAPHS; X RAY TOPOGRAPHY;

CRYSTAL DEFECTS;

EID: 0030260225     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00300-4     Document Type: Article

References (18)

1. B.J. Baliga, Technical Digest of Int. Conf. on Silicon Carbide and Related Materials, 1995 (Kyoto, 1995) p. 3.
2. Yu.M. Tairov and V.F. Tsvetkov, J. Crystal Growth 52 (1981) 146.
3. G. Ziegler, P. Lanig, D. Theis and C. Weyrich, IEEE Trans. Electron. Dev. ED-30 (1983) 277.
4. D.L. Barrett, J.P. McHugh, H.M. Hobgood, R.H. Hopkins, P.G. McMullin, R.C. Clarke and W.J. Choyke, J. Crystal Growth 128 (1993) 358.
5. R.C. Grass, L.O. Kiellberg, V.F. Tsvetkov, J.E. Sundgren and E. Janzen, J. Crystal Growth 132 (1993) 504.
6. S. Wang, M. Dudley, C. Carter, Jr., D. Sbury and C. Fazi, Mater. Res. Soc. Symp. Proc. 307 (1993) 249.
7. J. Takahashi, M. Kanaya and Y. Fujiwara, J. Crystal Growth 135 (1994) 56.
8. M. Tuominen, R. Yakimova, R.C. Glass, T. Tuomi and E. Janzen, J. Crystal Growth 144 (1994) 267.
9. M. Dudley, S. Wang, W. Huang, C. Carter, Jr., V. Tsvetkov and C. Fazi, J. Phys. D 28 (1995) A63.
10. P.G. Neudeck and J.A. Powell, IEEE Electron. Dev. Lett, 15 (1995) 63.
11. J. Takahashi, M. Kanaya and T. Hoshino, Inst. Phys. Conf. Ser. No. 137, Silicon Carbide and Related Materials (IOP, 1994) p. 13.
12. K. Koga, Y. Fujikawa, Y. Ueda and T. Yamaguchi, Amorphous and Crystalline Silicon Carbide IV, Springer Proceedings in Physics, Vol. 71 (Springer, Berlin, 1992) p. 96.
13. A.G. Acheson, English Patent 17911 (1892).
14. A. Lely, Ber. Dtsch. Keram. Ges. 32 (1955) 229.
15. H. Posen and J.A. Bruce, Silicon Carbide 1973 (University of South Carolina Press, Columbia, SC, 1974) p. 238.
16. R.S. Rai, G. Singh and S.R. Se Gupta, J. Crystal Growth 60 (1983) 170.
17. P. Krishna, S.-S. Jiang and A.R. Lang, J. Crystal Growth 71 (1985) 41.
18. Y. Inomata, H. Komatsu, M. Mitomo and Z. Inoue, J. Crystal Growth 2 (1968) 322.