Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 957-960

  Song, Jung Gyun ^a   Shin, Moo Whan ^a  

^a Myong Ji University   (South Korea)

Author keywords

Etching rate; Photoelectrochemical (PEC) etching; Surface roughness

Indexed keywords

ELECTROLYTES; HYDROFLUORIC ACID; PHOTOELECTROCHEMICAL CELLS; PHOTORESISTS; SILICON CARBIDE; SILICON WAFERS; SURFACE ROUGHNESS; ETCHING; HYDROGEN PEROXIDE; PHOTORESISTORS; ULTRAVIOLET RADIATION;

ETCHED SURFACE; ETCHING CHARACTERISTICS; ETCHING RATE; PHOTOELECTROCHEMICAL ETCHING; ROOT MEAN SQUARE ROUGHNESS;

WET ETCHING; SILICON CARBIDE;

EID: 0036432407     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.957     Document Type: Conference Paper

References (4)

1. V. Khemka, T.P. Chow and R.J. Gutmann: J. Electronic Mater., Vol. 27, No. 10 (1998). P 1128-1135
2. Joseph S. Shor, liana Grimberg, Ben-Zion Weiss and Anthony D. Krutz: Appl. Phys. Leu. Vol. 62, No. 22 (1993). P. 2836-2838
3. Joseph S. Shor: J. Electrochem. Soc., Vol. 141, No. 3 (1994), p. 778-781
4. C. E. Stutz.: J. Electronic Materials, Vol. 27, No. 12 (1998), P. L81-L83