Dislocation conversion in 4H silicon carbide epitaxy

Journal of Crystal Growth

Volumn 244, Issue 3-4, 2002, Pages 257-266

  Ha, S ^a   Mieszkowski, P ^a   Skowronski, M ^a   Rowland, L B ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b Sterling Semiconductor Inc   (United States)

Author keywords

A1. Characterization; A1. Interfaces; A1. Line defects; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials

Indexed keywords

CHARACTERIZATION; DISLOCATIONS (CRYSTALS); ETCHING; INTERFACES (MATERIALS); OPTICAL MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL ETCHING;

VAPOR PHASE EPITAXY;

EID: 0036788247     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01706-2     Document Type: Article

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