Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy

Applied Physics Letters

Volumn 68, Issue 10, 1996, Pages 1380-1382

  Garni, B ^a   Ma, Jian ^a   Perkins, N ^a   Liu, Jutong ^a   Kuech, T F ^a   Lagally, M G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; MORPHOLOGY; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SURFACES; VAPOR PHASE EPITAXY; X RAY PHOTOELECTRON SPECTROSCOPY;

BIAS VOLTAGE; ELECTRON TRAP STATES; GALLIUM NITRIDE; HALIDE VAPOR PHASE EPITAXY; SCANNING TUNNELING LUMINESCENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030568356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116086     Document Type: Article

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