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Semiconductor Science and Technology

Volumn 17, Issue 6, 2002, Pages 510-514

The effect of mass transfer on the photoelectrochemical etching of GaN

(4) Harush, E a Brandon, S a Salzman, J a Paz, Y a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HIGH INTENSITY LIGHT; MASKS; MASS TRANSFER; MATHEMATICAL MODELS; SILICON WAFERS; SOLUTIONS;

GEOMETRIC CONFORMATION; PHOTOELECTROCHEMICAL ETCHING; STIRRING SPEED;

GALLIUM NITRIDE;

EID: 0036609980 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/6/302 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.