Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 665-668

  Kato, Masashi ^a   Ichimura, Masaya ^a   Arai, Eisuke ^a   Ramasamy, P ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b ANNA UNIVERSITY   (India)

Author keywords

6H SiC; Electrochemical Etching; Etching Rate; KOH Solution; Patterning

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); CURRENT DENSITY; DRY ETCHING; ELECTROCHEMISTRY; MORPHOLOGY; OXIDATION; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; THERMAL EFFECTS;

ELECTROCHEMICAL ETCHING;

SILICON CARBIDE;

EID: 0242496530     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.665     Document Type: Conference Paper

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