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Physica Status Solidi (A) Applied Research

Volumn 190, Issue 1, 2002, Pages 5-14

Rapid delineation of extended defects in GaN and a novel method for their reduction

(9) Visconti, P a,b Huang, D a Yun, F a Reshchikov, M A a King, T a Cingolani, R b Jasinski, J c Liliental Weber, Z c Morkoc H a

a VIRGINIA COMMONWEALTH UNIVERSITY (United States)

b NATIONAL NANOTECHNOLOGY LABORATORY (Italy)

c LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RAPID DELINEATION;

ATOMIC FORCE MICROSCOPY; CRYSTAL WHISKERS; DEFECTS; ELECTRON DIFFRACTION; ETCHING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM DOTS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 0036502397 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200203)190:1<5::AID-PSSA5>3.0.CO;2-H Document Type: Conference Paper

Times cited : (10)

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