High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation

Electronics Letters

Volumn 36, Issue 23, 2000, Pages 1969-1971

  Maher, H ^a   DiSanto, D W ^a   Dvorak, M W ^a   Soerensen, G ^a   Bolognesi, C R ^a   Bardwell, J A ^b   Tang, H ^b   Webb, J B ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PIEZOELECTRIC MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; ULTRAVIOLET RADIATION;

GATE DIODES; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR (HFET); MESA ISOLATION; WET ETCHING;

FIELD EFFECT TRANSISTORS;

EID: 0034322078     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001351     Document Type: Article

References (8)

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