Broad-area photoelectrochemical etching of GaN

Electronics Letters

Volumn 33, Issue 3, 1997, Pages 245-246

  Youtsey, C ^a   Adesida, I ^a   Bulman, G ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Etching; Gallium nitride

Indexed keywords

CATHODES; ETCHING; LIGHTING; MERCURY VAPOR LAMPS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POTASSIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES;

ELECTROCHEMICAL CELL; ELECTRON BEAM EVAPORATION; PHOTOELECTROCHEMICAL ETCHING; PHOTOENHANCED WET CHEMICAL ETCHING PROCESS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030783570     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970121     Document Type: Article

References (9)

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