Wet etching and its application to the fabrication and characterization of AlGaN/GaN HFETs

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 2000, Pages 192-198

  Maher, H ^a   DiSanto, D ^a   Soerensen, G ^a   Dvorak, M W ^a   MacElwee, T W ^b   Webb, J B ^c   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOCHEMICAL REACTIONS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; SURFACE ROUGHNESS;

ALUMINUM GALLIUM NITRIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; ULTRAVIOLET PHOTO-ASSISTED WET ETCHING;

FIELD EFFECT TRANSISTORS;

EID: 0034594208     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, "GaN: Processing, defects, and devices," J. Appl. Phys., vol. 86, pp. 1-78, 1999.
2. E. D. Haberer, C.-H. Chem, A. Abare, M. Hansen, S. DenBaars, L. Coldren, U. Mishra, and E. L. Hu, "Channeling as a mechanism for dry etch damage in GaN," Appl. Phys. Lett., vol. 76, pp. 3941-3943, 2000.
3. 2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors," J. Vac. Sci. Technol. B, vol. 17, pp. 2755-2758, 1999.
4. C. Youtsey, I. Adesida, L. T. Romano, and G. Bulman, "Smooth n-type GaN surfaces by photoenhanced wet etching," J. Appl. Phys., vol. 72, pp. 560-562, 1998.
5. J. A. Bardwell, I. G. Foulds, J. B. Webb, H. Tang, J. Fraser, S. Moisa, and S. J. Rolfe, "A simple wet etch for GaN," J. Electron. Mater., vol. 28, pp. L24, 1999.
6. J. A. Bardwell, I. Foulds, B. Lamontagne, H. Tang, J. B. Webb, P. Marshall, S. J. Rolfe, J. Stapleton, and T. W. MacElwee, "Fabrication of high performance GaN modulation doped field effect transistors," J. Vac. Sci. Technol. A, vol. 18, pp. 750 - 753, 2000.
7. L. Dogliotti and E. Hayon, "Flash photolysis of persulfate ions in aqueous solutions," J. Phys. Chem., vol. 71, pp. 2511-2516, 1967.
8. I. M. Kolhoff and I. K. Miller, "The chemistry of persulfate I: The kinetics and mechanism of the decomposition of the persulfate ion in aqueous medium," J. Am. Chem. Soc., vol. 73, pp. 3055-3059, 1951.
9. H. Tang, J. B. Webb, J. A. Bardwell, and T. MacElwee, "Growth of high-performance GaN modulation-doped field-effect transistorsby ammonia-molecular-beam epitaxy," J. Vac. Sci. Technol. A, vol. 18, pp. 652-655, 2000.