Review and perspective of Hf-based high-k gate dielectrics on silicon

Critical Reviews in Solid State and Materials Sciences

Volumn 37, Issue 3, 2012, Pages 131-157

  He, Gang ^a   Sun, Zhaoqi ^a   Li, Guang ^a   Zhang, Lide ^b  

^a ANHUI UNIVERSITY   (China)

^b INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

CMOS devices; gate dielectrics; Hf based thin films; high k; interfacial structure; thermal stability

Indexed keywords

ADVANCED CMOS DEVICE; CMOS DEVICES; CMOS PROCESSS; CRYSTALLIZATION TEMPERATURE; EQUIVALENT OXIDE THICKNESS; FUTURE APPLICATIONS; HIGH DIELECTRIC CONSTANTS; HIGH PERMEABILITY; HIGH-K; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; HIGH-K OXIDES; HIGH-TEMPERATURE PROCESSING; INTERFACIAL LAYER; INTERFACIAL STRUCTURES; LATEST DEVELOPMENT; POTENTIAL APPLICATIONS; RESEARCH ACTIVITIES;

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; THERMODYNAMIC STABILITY;

GATE DIELECTRICS;

EID: 84866374073     PISSN: 10408436     EISSN: 15476561     Source Type: Journal    
DOI: 10.1080/10408436.2011.602136     Document Type: Review

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