Change of the trap energy levels of the atomic layer deposited HfLaO x films with different la concentration

Applied Physics Letters

Volumn 94, Issue 26, 2009, Pages

  An, Chee Hong ^a   Lee, Myung Soo ^a   Choi, Ju Yun ^a   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; ATOMIC LAYER DEPOSITED; CONDUCTION MECHANISM; FIELD DEPENDENCE; GATE INJECTION; POOLE-FRENKEL EMISSION; TRAP ENERGY LEVELS; ULTRA-THIN;

ATOMS; HAFNIUM; HAFNIUM COMPOUNDS;

LANTHANUM;

EID: 67649980015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159625     Document Type: Article

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