Fabrication and characterization of La-doped HfO 2 gate dielectrics by metal-organic chemical vapor deposition

Applied Surface Science

Volumn 256, Issue 8, 2010, Pages 2496-2499

  Huang, Liu Ying ^a   Li, Ai Dong ^a   Zhang, Wen Qi ^a   Li, Hui ^a   Xia, Yi Dong ^a   Wu, Di ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

High k gate dielectric; Mixing precursors; MOCVD

Indexed keywords

DIELECTRIC DEVICES; ENERGY GAP; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; INDUSTRIAL CHEMICALS; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MIXING; MOS DEVICES; MOSFET DEVICES; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDE SEMICONDUCTORS; PLATINUM COMPOUNDS; SILICATES; SILICON; SUBSTRATES; THERMODYNAMIC STABILITY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

EQUIVALENT OXIDE THICKNESS; FABRICATION AND CHARACTERIZATIONS; HFO2 GATE DIELECTRICS; HIGH- K GATE DIELECTRICS; HIGH-K GATE DIELECTRIC FILM; INDUCTIVE COUPLED PLASMA; LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MIXING PRECURSOR;

DIELECTRIC MATERIALS;

EID: 74149087977     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.10.094     Document Type: Article

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