SCOPUS 정보 검색 플랫폼

Surface and Coatings Technology

Volumn 201, Issue 9-11 SPEC. ISS., 2007, Pages 5336-5339

Electrical properties of HfOxNy thin films deposited by PECVD

(4) Park, J H a Hyun, J S a Kang, B C a Boo, J H a

a Sungkyunkwan University (South Korea)

Author keywords

High k dielectrics; Leakage current density; PECVD; Thermal stability; Thin film

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; CURRENT DENSITY; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMODYNAMIC STABILITY;

HAFNIUM OXYNITRIDE;

HAFNIUM COMPOUNDS;

ANNEALING; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; CURRENT DENSITY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMODYNAMIC STABILITY;

EID: 33846546025 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2006.07.034 Document Type: Article

Times cited : (25)

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