Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Journal of Applied Physics

Volumn 104, Issue 6, 2008, Pages

  Cherkaoui, K ^a   Monaghan, S ^a   Negara, M A ^a   Modreanu, M ^a   Hurley, P K ^a   O'Connell, D ^a   McDonnell, S ^b   Hughes, G ^b   Wright, S ^c   Barklie, R C ^c   Bailey, P ^d   Noakes, T C Q ^d  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c TRINITY COLLEGE DUBLIN   (Ireland)

^d DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 54749146790     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2978209     Document Type: Article

References (35)

1. H. Wong and H. Iwai, Microelectron. Eng. 0167-9317 10.1016/j.mee.2006.01. 271 83, 1867 (2006).
2. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 0036-8075 10.1126/science.1083212 300, 1269 (2003).
3. H. Hu, C. X. Zhu, Y. F. Lu, M. F. Li, B. J. Cho, and W. K. Choi, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2002.802602 23, 514 (2002).
4. J. Robertson, Rep. Prog. Phys. 0034-4885 10.1088/0034-4885/69/2/R02 69, 327 (2006).
5. N. Zhan, K. L. Ng, H. Wong, M. C. Poon, and C. W. Kok, Proceedings of the IEEE Conference Electron Devices and Solid State Circuits, 2003 (unpublished), p. 431.
6. M. -H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D. -H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett. 0003-6951 10.1063/1.1487923 81, 472 (2002).
7. H. Harris, K. Choi, N. Mehta, A. Chandolou, N. Biswas, G. Kipshidze, S. Nikishin, S. Gangopadhyay, and H. Temkin, Appl. Phys. Lett. 0003-6951 10.1063/1.1495882 81, 1065 (2002).
8. R. Thielsch, A. Gatto, J. Heber, and N. Kaiser, Thin Solid Films 0040-6090 10.1016/S0040-6090(02)00208-0 410, 86 (2002).
9. J. P. Lehan, Y. Mao, B. G. Bovard, and H. A. Macleod, Thin Solid Films 0040-6090 10.1016/0040-6090(91)90131-G 203, 227 (1991).
10. P. Bailey, T. C. Q. Noakes, and D. P. Woodruff, Surf. Sci. 0039-6028 10.1016/S0039-6028(99)00344-1 426, 358 (1999).
11. W. -K. Shih, C. M. Mazier, and A. F. Tasch, UTQUANT 2.0 User's Guide (University of Texas, Austin, 1997).
12. C. A. Richter, A. R. Hefner, and E. M. Vogel, IEEE Electron Device Lett. 0741-3106 10.1109/55.892436 22, 35 (2001).
13. B. J. O'Sullivan, P. K. Hurley, C. Leveugle, and J. H. Das, J. Appl. Phys. 0021-8979 10.1063/1.1343897 89, 3811 (2001).
14. P. K. Hurley, K. Cherkaoui, E. O'Connor, M. C. Lemme, H. D. B. Gottlob, M. Schmidt, S. Hall, Y. Lu, O. Buiu, B. Raeissi, J. Piscator, O. Engstrom, and S. B. Newcomb, J. Electrochem. Soc. 0013-4651 10.1149/1.2806172 155, G13 (2008).
15. M. Schmidt, M. C. Lemme, H. Kurz, T. Witters, T. Schram, K. Cherkaoui, A. Negara, and P. K. Hurley, Microelectron. Eng. 0167-9317 10.1016/j.mee.2005.04. 023 80, 70 (2005).
16. G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, Appl. Phys. Lett. 0003-6951 10.1063/1.97611 49, 348 (1986).
17. A. Stesmans and V. V. Afanas'ev, Phys. Rev. B 0163-1829 10.1103/PhysRevB.57.10030 57, 10030 (1998).
18. A. Stesmans and V. V. Afanas'ev, Appl. Surf. Sci. 0169-4332 10.1016/S0169-4332(00)00778-9 168, 324 (2000).
19. P. K. Hurley, B. J. O'Sullivan, V. V. Afanas'ev, and A. Stesmans, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.1846716 8, G44 (2005).
20. A. H. Al-Bayati, K. G. Orrman-Rossiter, R. Badheka, and D. G. Armour, Surf. Sci. 0039-6028 10.1016/0039-6028(90)90533-E 237, 213 (1990).
21. K. T. Queeney, M. K. Weldon, J. P. Chang, Y. J. Chabal, A. B. Gurevich, J. Sapjeta, and R. L. Opila, J. Appl. Phys. 0021-8979 10.1063/1.372017 87, 1322 (2000).
22. F. Giustino and A. Pasquarello, Microelectron. Eng. 0167-9317 10.1016/j.mee.2005.04.025 80, 420 (2005).
23. K. Cherkaoui, A. Negara, S. McDonnell, G. Hughes, M. Modreanu, and P. K. Hurley, Proceedings of the 25th International Conference on Microelectronics, 2006, p. 379.
24. S. Taylor, J. F. Zhang, and W. Eccleston, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/8/7/037 8, 1426 (1993).
25. H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, and K. Yasutake, Appl. Phys. Lett. 0003-6951 10.1063/1.2721366 90, 151904 (2007).
26. A. Callegari, E. Cartier, M. Gribelyuk, H. F. Okorn-Scmidt, and T. Zabel, J. Appl. Phys. 0021-8979 10.1063/1.1417991 90, 6466 (2001).
27. K. Yamamoto, S. Hayashi, M. Kubota, and M. Niwa, Appl. Phys. Lett. 0003-6951 10.1063/1.1506782 81, 2053 (2002).
28. B. Y. Tsui and H. W. Chang, J. Appl. Phys. 0021-8979 10.1063/1.1574594 93, 10119 (2003).
29. K. Choi, H. Temkin, H. Harris, S. Gangopadhyay, L. Xie, and M. White, Appl. Phys. Lett. 0003-6951 10.1063/1.1771457 85, 215 (2004).
30. D. -Y. Cho, S. -J. Oh, Y. J. Chang, T. W. Noh, R. Jung, and J. -C. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2201050 88, 193502 (2006).
31. C. D. Wagner, W. M. Riggs, L. E. Davis, and J. F. Moulder, Handbook of X-Ray Photoelectron Spectroscopy, G. E. Muilenberg, ed. (Perkin-Elmer Corporation (Physical Electronics), 1979) (1st edition).
32. R. G. Vitchev, J. J. Pireaux, T. Conard, H. Bender, J. Wolstenholme, and C. Defranoux, Appl. Surf. Sci. 0169-4332 10.1016/j.apsusc.2004.05.135 235, 21 (2004).
33. M. P. Seah and S. J. Spencer, Surf. Interface Anal. 0142-2421 10.1002/sia.1565 35, 515 (2003).
34. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.38.6084 38, 6084 (1988).
35. S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 0741-3106 10.1109/55.568766 18, 209 (1997).