Low temperature UV/ozone oxidation formation of HfSiON gate dielectric

Thin Solid Films

Volumn 460, Issue 1-2, 2004, Pages 242-246

  Pant, Gaurang ^a   Punchaipetch, Prakaipetch ^a   Kim, M J ^a   Wallace, Robert M ^a   Gnade, Bruce E ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

Dielectrics; Electrical properties and measurements; Oxidation

Indexed keywords

DEPOSITION; GATES (TRANSISTOR); GROWTH (MATERIALS); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDATION; OZONE; SYNTHESIS (CHEMICAL); ULTRAHIGH VACUUM; ULTRAVIOLET RADIATION;

CAPACITANCE VOLTAGE CHARACTERISTICS; ELECTRICAL PROPERTIES AND MEASUREMENTS; INTERFACIAL LAYER GROWTH; VAPOR LAMPS;

DIELECTRIC FILMS;

EID: 2942568019     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.01.109     Document Type: Article

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