Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy

Micron

Volumn 41, Issue 1, 2010, Pages 15-19

  Wang, X F ^a   Li, Quan ^a   Lee, P F ^b   Dai, J Y ^b   Gong, X G ^c  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c FUDAN UNIVERSITY   (China)

Author keywords

Electron energy loss spectroscopy; HfAlO; HfO2; High k dielectric; Interface

Indexed keywords

AL INCORPORATION; HIGH-K DIELECTRIC; IN-BETWEEN; INTERFACIAL STABILITIES; INTERFACIAL STRUCTURES; OXYGEN ANNEALING; SI SUBSTRATES; SPATIALLY RESOLVED;

DISSOCIATION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRONS; HAFNIUM; HAFNIUM COMPOUNDS; MONOLAYERS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON OXIDES; THIN FILMS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 72049122412     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2009.07.009     Document Type: Article

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