Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 722-725

  Lu, Y ^a   Buiu, O ^a   Hall, S ^a   Mitrovic, I Z ^a   Davey, W ^a   Potter, R J ^a   Chalker, P R ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HYSTERESIS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; THICK FILMS;

FOWLER-NORDHEIM-LIKE CONDUCTION; HAFNIUM ALUMINATE; POOLE-FRENKEL-LIKE CONDUCTION;

DIELECTRIC MATERIALS;

EID: 34247102733     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.052     Document Type: Article

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